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PD - 94407
SMPS MOSFET
Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torqe, 6-32 or M3 screw
IRFP27N60K
HEXFET(R) Power MOSFET
VDSS
600V
RDS(on) typ.
180m
ID
27A
TO-247AC
Max.
27 18 110 500 4.0 30 13 -55 to + 150 300 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns
C
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
530 27 50
Units
mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.29 --- 40
Units
C/W
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1
03/20/02
IRFP27N60K
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 600 --- --- V VGS = 0V, ID = 250A --- 0.64 --- V/C Reference to 25C, ID = 1mA --- 180 220 m VGS = 10V, ID = 16A 3.0 --- 5.0 V VDS = V GS, ID = 250A --- --- 50 VDS = 600V, VGS = 0V A --- --- 250 VDS = 480V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Min. 14 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 27 110 43 38 4660 460 41 5490 120 250 Max. Units Conditions --- S VDS = 50V, ID = 16A 180 ID = 27A 56 nC VDS = 480V 86 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 27A ns --- RG = 4.3 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Diode Characteristics
Symbol IS
ISM
VSD trr Q rr IRRM ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time
Min. Typ. Max. Units --- --- --- --- 27 A 110
--- --- 1.5 V --- 620 920 ns --- 11 16 C --- 36 53 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 27A, VGS = 0V TJ = 25C, IF = 27A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Starting TJ = 25C, L = 1.4mH, RG = 25,
IAS = 27A, dv/dt = 13V/ns. (See Figure 12a)
ISD 27A, di/dt 390A/s, VDD V(BR)DSS,
TJ 150C.
2
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IRFP27N60K
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100
10
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
5.0V
1
1
0.1
5.0V
0.01
0.1
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 0.01 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.5
I D = 28A
ID, Drain-to-Source Current ( )
100.00
T J = 150C
R DS(on) , Drain-to-Source On Resistance
3.0
2.5
(Normalized)
10.00
2.0
1.00
1.5
T J = 25C
0.10
1.0
VDS = 100V 20s PULSE WIDTH
0.01 5.0 7.0 9.0 11.0 13.0 15.0
0.5
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP27N60K
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
VGS, Gate-to-Source Voltage (V)
12
ID = 28A
10
V DS = 480V V DS = 300V V DS = 120V
10000
C, Capacitance(pF)
Ciss
7
1000
5
Coss
100
2
Crss
10 1 10 100 1000
0 0 30 60 90 120 150
VDS , Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
100
I SD, Reverse Drain Current (A)
10
T J= 150 C T J 25 C =
10 100sec 1msec 1 Tc = 25C Tj = 150C Single Pulse 10 100
1
0.1 0.2 0.5 0.8
V GS = 0 V
1.1 1.4
10msec 1000 10000
0.1
V SD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP27N60K
30
VDS
25
RD
VGS RG
D.U.T.
+
20
-VDD
ID , Drain Current (A)
10V
15
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS
5
90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50 0.1 0.20
Thermal Response
0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T
0.001 0.00001
t1/ t
2 J = P DM x Z thJC
P DM t1 t2 +T C 1
0.0001
0.001
0.01
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP27N60K
950
760
EAS , Single Pulse Avalanche Energy (mJ)
TOP ID 13A 18A 28A BOTTOM
1 5V
570
VDS
L
D R IV E R
380
RG
20V
D .U .T
IA S
+ - VD D
A
190
tp
0 .0 1
Fig 12c. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
Starting Tj, Junction Temperature
( C)
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
tp
V (B R )D SS
IAS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
VGS
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
6
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IRFP27N60K
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFP27N60K
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
3.6 5 (.14 3) 3.5 5 (.14 0) 0.2 5 (.0 10 ) M -A5 .50 (.21 7) 2 0 .30 (.80 0) 1 9 .70 (.77 5) 1 2 3 -C14.8 0 (.5 83 ) 14.2 0 (.5 59 ) 4 .30 (.1 70 ) 3 .70 (.1 45 )
LE AD A S SIG N ME NTS 1 2 3 4 G ATE DR A IN SO UR C E DR A IN
-DDBM 5 .30 (.20 9) 4 .70 (.18 5) 2 .50 (.0 89 ) 1 .50 (.0 59 ) 4
1 5.9 0 (.6 26 ) 1 5.3 0 (.6 02 ) -B-
2X
5.50 (.2 1 7) 4.50 (.1 7 7)
NO TE S: 1 DIM EN SION ING & TO LER AN CING P ER A N SI Y14.5M , 1982. 2 CON TR OLLIN G D IM EN SIO N : IN CH . 3 CON F OR M S TO JED E C OU TLIN E TO-247-A C .
2 .40 (.0 94 ) 2 .00 (.0 79 ) 2X 5.45 (.2 1 5) 2X
1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0.2 5 (.01 0) M 3 .40 (.1 33 ) 3 .00 (.1 18 ) C AS
0 .8 0 (.0 31 ) 3X 0 .4 0 (.0 16 ) 2.60 (.10 2) 2.20 (.08 7)
TO-247AC Part Marking Information
E X A M P L E : T H IS IS A N IR F P E 30 W IT H A S S E M B L Y LOT COD E 3A1Q
A
I N T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT COD E
P AR T N UM B E R IR F P E 3 0 3A1Q 9302 DATE CO DE (Y Y W W ) YY = YE A R W W W EEK
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/02
8
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